| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | 2011+ | On Request | On Request |
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The Vishay Siliconix SUP50N03-5M1P-GE3 is a high-performance N-Channel MOSFET designed for various power applications. It features a maximum drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 50A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds On) of 5.1mOhm at 22A and 10V gate-source voltage, contributing to efficient power transfer and reduced heat generation. The gate charge (Qg) is 66nC at 10V, and the input capacitance (Ciss) is 2780pF at 15V.
With a maximum gate-source voltage of ±20V and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA, the SUP50N03-5M1P-GE3 is suitable for a wide range of driving conditions. The device operates within a junction temperature range of -55°C to 150°C.
Packaged in a standard TO-220AB (TO-220-3) through-hole configuration, this MOSFET is designed for robust mounting and thermal management. It is supplied in bulk packaging.
The maximum drain-to-source voltage is 30V.
The continuous drain current is 50A at 25°C case temperature.
The maximum on-resistance is 5.1mOhm at 22A and 10V.
The maximum gate charge is 66nC at 10V.
The operating junction temperature range is -55°C to 150°C.
It is available in a through-hole TO-220-3 (TO-220AB) package.
Maximum power dissipation is 59.5W at case temperature and 2.7W at ambient temperature.