SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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3,354 pcs
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3354 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The Vishay Dale SUP40N10-30 is a TrenchFET® Power MOSFET featuring an N-Channel configuration. It is rated for a drain-source breakdown voltage of 100V and a continuous drain current of up to 40A at 25°C case temperature, with operation up to 175°C junction temperature.
Key electrical characteristics include a low on-state resistance (RDS(on)) of 0.030Ω typical at VGS = 10V and ID = 15A, and a typical gate threshold voltage of 2V. Dynamic parameters such as input capacitance (Ciss) are 2400pF, output capacitance (Coss) are 270pF, and reverse transfer capacitance (Crss) are 90pF.
This MOSFET is housed in a TO-220AB package suitable for through-hole mounting. It has a maximum power dissipation of 107W at 25°C case temperature and thermal resistance ratings including Junction-to-Case (RthJC) of 1.4°C/W.
The SUP40N10-30 is suitable for various power switching applications where high current and voltage handling are required.
The drain-source breakdown voltage is 100V.
The typical on-state resistance is 0.024Ω at VGS = 10V and ID = 15A.
The maximum continuous drain current is 40A at a case temperature of 25°C.
The operating junction and storage temperature range is -55°C to 175°C.
The SUP40N10-30 is available in a TO-220AB package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.