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2,028 pcs
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2028 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The VBsemi SUM90N06-4m4P is a single N-channel MOSFET designed for various electronic applications. It is housed in a TO263 package, suitable for through-hole mounting.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 150A. The gate-source voltage (Vgs) is rated at ±20V, with a typical gate threshold voltage (Vth) of 3V. This MOSFET technology offers efficient power switching capabilities.
This component is suitable for applications requiring robust power handling and switching performance. Its specifications make it a viable option for power management circuits and industrial control systems.
The drain-source voltage (Vds) rating is 60V.
The continuous drain current (Id) rating is 150A.
The device is packaged in TO263.
The typical gate threshold voltage (Vth) is 3V.
The gate-source voltage (Vgs) range is ±20V.