| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,040 pcs
|
2040 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| Package / Case | |
| SVHC Present |
The VBsemi SUM90N04-3M3P is a TrenchFET® Power MOSFET designed for various power applications. It features an N-Channel configuration with a drain-source breakdown voltage of 40V. The device exhibits a low on-state resistance, measuring 0.0033 Ohms at a gate-source voltage of 10V and 0.0041 Ohms at 4.5V.
With a continuous drain current rating of 90A at 25°C case temperature, this MOSFET is suitable for applications such as power supplies, DC/DC converters, and power tools. It is packaged in a TO-263 surface-mount package.
Key electrical characteristics include a gate threshold voltage typically around 1V and a maximum gate-body leakage of 250nA. The operating junction and storage temperature range is from -55°C to 150°C. Thermal resistance from junction-to-case is 1°C/W.
The drain-source breakdown voltage is 40V.
The on-state resistance is 0.0033 Ohms at Vgs=10V.
The continuous drain current is 90A at 25°C case temperature.
The SUM90N04-3M3P is available in a TO-263 package.
The operating junction and storage temperature range is -55°C to 150°C.