| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
58 pcs
|
58 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUM90N03-2M2P-E3 is a high-performance N-Channel Power MOSFET designed for demanding applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 90A at 25°C case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 2.2mOhm at 10V gate-source voltage, ensuring efficient power transfer and minimizing heat generation. The device also features a typical gate charge (Qg) of 82 nC, facilitating fast switching speeds.
Packaged in a surface-mount TO-263 (D²Pak) package, the SUM90N03-2M2P-E3 is suitable for automated assembly processes. Its operating temperature range is -55°C to 175°C, making it robust for various environmental conditions. Applications include OR-ing and server power management.
This MOSFET is built using Vishay's TrenchFET technology, offering 100% Rg and UIS tested for reliability and performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V minimum at VGS = 0 V, ID = 250 µA.
The maximum continuous drain current is 90 A at case temperature 25 °C and 33 A at ambient temperature 25 °C.
The maximum on-resistance is 2.2 mOhm at VGS = 10 V, ID = 32 A or 90 A.
The operating junction temperature range is -55 °C to 175 °C.
It is available in a surface-mount TO-263 (D2Pak) package.
The maximum power dissipation is 250 W at case temperature 25 °C.
The maximum gate charge is 257 nC at VGS = 10 V.