| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,020 pcs
|
5020 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | 2026-06-03 08:15:27 | |
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUM85N15-19-E3 is a high-performance N-Channel Power MOSFET. It is designed with TrenchFET technology, offering a low thermal resistance package and 100% Rg tested for reliability.
Key electrical specifications include a Drain-Source Voltage (Vdss) of 150V and a continuous drain current of 85A at 25°C case temperature. The Rds(on) is as low as 0.019 Ohms at 30A and 10V gate drive. The input capacitance (Ciss) is 4750 pF and the total gate charge (Qg) is 110 nC.
This MOSFET operates within a junction temperature range of -55°C to 175°C. It is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package. The thermal resistance from junction to case is 0.4 °C/W, and junction-to-ambient is 40 °C/W when mounted on a 1-inch square PCB.
Applications for the SUM85N15-19-E3 include primary side switching, automotive systems such as 42V EPS and ABS, DC/DC conversion, and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150 V minimum.
85 A at TC = 25°C, 50 A at TC = 125°C.
-55°C to 175°C.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
110 nC at VDS = 75 V, ID = 85 A.