| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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900 pcs
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900 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SUM70N04-07L-E3 is an N-Channel Power MOSFET designed with TrenchFET technology. It offers a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of up to 70A at 25°C case temperature. The MOSFET exhibits a low on-state resistance (Rds(on)) of 7.4mOhm at 30A and 10V Vgs, and 0.011 Ohm at 10A and 4.5V Vgs.
This device operates within a wide temperature range of -55°C to 175°C (TJ). It is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface-mount package. The high junction temperature capability of 175°C and low threshold voltage make it suitable for demanding applications.
Key electrical characteristics include an input capacitance (Ciss) of 2800 pF at 25V and a total gate charge (Qg) of 75 nC at 10V. The maximum power dissipation is rated at 100W (Tc) and 3.75W (Ta).
Applications for this MOSFET include motor control and other power switching circuits where high current and low on-resistance are critical. Its robust construction and thermal performance ensure reliability in various operating conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 40V.
The maximum continuous drain current is 70A at case temperature 25°C.
The maximum on-resistance is 7.4mOhm at VGS=10V, ID=30A.
The operating junction temperature range is -55°C to 175°C.
The package is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
The maximum power dissipation is 100W at case temperature 25°C.
The maximum gate threshold voltage is 3V at ID=250µA, VDS=VGS.