| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,562 pcs
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7562 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Vishay Dale SUM65N20-30 is a 200V N-Channel power MOSFET featuring TrenchFET technology and a 175°C maximum junction temperature. It offers a low on-resistance of 0.030 Ohms at VGS = 10V and a continuous drain current of 65A at 25°C case temperature.
This MOSFET is suitable for applications requiring high efficiency and thermal performance, such as isolated DC/DC converters. It has a low thermal resistance package, with a junction-to-case thermal resistance of 0.4 °C/W.
The device is available in a D2PAK (TO-263) surface-mount package. Key electrical parameters include a gate-source threshold voltage between 2V and 4V, and a gate-body leakage of ±100 nA at ±20V VGS.
Absolute maximum ratings include a drain-source voltage of 200V and a gate-source voltage of ±20V. The continuous drain current is rated at 65A at 25°C and 37A at 125°C. Pulsed drain current can reach up to 140A.
200V minimum.
65A at 25°C case temperature.
0.030Ω maximum at VGS = 10V.
-55°C to +175°C.
D2PAK (TO-263) surface-mount package.
Typical 2V, maximum 4V.
Typical 90nC.