| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,030 pcs
|
2030 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Package / Case | |
| Technology |
The SUM60N10-17-GE3 is a single N-channel MOSFET manufactured by VBsemi, housed in a TO-263 surface-mount package. This component utilizes Trench Technology for enhanced performance.
Key electrical specifications include a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 100A. The gate-source voltage (Vgs) is rated at ±20V, with a typical gate threshold voltage (Vth) of 2.5V. The on-resistance (RDS(on)) is specified at 23mΩ at VGS = 4.5V and 10mΩ at VGS = 10V.
This MOSFET is suitable for various power switching applications where a robust and efficient component is required. Its surface-mount TO-263 package facilitates integration into compact electronic designs.
The drain-source voltage is 100V.
The continuous drain current is 100A.
It uses Trench Technology.
The package type is TO-263.
The typical gate threshold voltage is 2.5V.
The on-resistance at VGS = 10V is 10mΩ.