| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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31,000 pcs
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31000 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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| SVHC Present |
The Vishay Dale SUM60N10-17 is an N-Channel Power MOSFET from the TrenchFET® series, designed for demanding applications requiring high temperature operation up to 175°C. It offers a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 60A at 25°C case temperature.
Key electrical characteristics include a low on-state resistance (RDS(on)) of 0.0165 Ohms at VGS = 10V and ID = 30A, and 0.019 Ohms at VGS = 6V and ID = 20A. The gate threshold voltage is typically 2.4V. It is optimized for fast switching and is 100% Rg and UIS tested.
This MOSFET is housed in a TO-263 surface mount package, making it suitable for various power conversion applications such as isolated DC/DC converters and primary-side switching. The low thermal resistance (RthJC of 1.0 °C/W) and high junction temperature rating contribute to its reliability in high-power designs.
Absolute maximum ratings include a pulsed drain current of 100A and an avalanche current of 40A. The operating junction and storage temperature range is -55°C to 175°C.
The maximum drain-source voltage (VDS) for the SUM60N10-17 is 100 V.
The continuous drain current (ID) at 25°C case temperature is 60 A.
The typical on-state resistance (RDS(on)) at VGS = 10V and ID = 30A is 0.0165 Ω.
The maximum operating junction temperature (TJ) is 175 °C.
The SUM60N10-17 is supplied in a TO-263 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.