| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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77 pcs
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77 pcs | On Request | 1 | On Request | On Request | 16+PBF | On Request | On Request |
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The Vishay SUM60N04-12 is a high-performance N-Channel MOSFET designed for various power management applications. It features a drain-source breakdown voltage of 40V and a continuous drain current capability of 60A, making it suitable for demanding tasks. The MOSFET exhibits a low on-resistance of typically 5.4 mOhms at a gate-source voltage of 10V and a drain current of 30A, contributing to efficient power transfer.
This component operates with a gate-source voltage up to 20V and has typical rise and fall times of 150ns and 80ns, respectively. Its typical turn-on delay is 15ns, and turn-off delay is 60ns, enabling fast switching speeds. The MOSFET is constructed using Silicon technology and operates in enhancement mode.
Packaged in a TO263 surface mount package, the SUM60N04-12 is designed for ease of integration into printed circuit boards. It operates within a temperature range of -55°C to +175°C. The device is RoHS compliant and has an MSL rating of 1.
The drain-source breakdown voltage is 40V.
The continuous drain current is 60A.
The typical Rds On is 5.4 mOhms.
The package type is TO263.
The mounting type is Surface Mount.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.