| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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477 pcs
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477 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | 1138+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUM60N02-3M9P-E3 is an N-Channel Power MOSFET designed for high-efficiency applications. It offers a 20V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C case temperature.
This MOSFET boasts a low drain-source on-state resistance (rDS(on)) of 3.9mOhm at a gate-source voltage of 10V and a drain current of 20A. It also exhibits a low rDS(on) of 5.2mOhm at 4.5V gate-source voltage, making it suitable for low-voltage drive applications.
The device operates over a wide temperature range from -55°C to 175°C. It is housed in a TO-263-3, D²Pak package, designed for surface mounting. The MOSFET is rated for a maximum power dissipation of 120W at 25°C case temperature and 3.75W at 25°C ambient temperature when mounted on a 1" square PCB.
Key features include TrenchFET technology, 175°C junction temperature capability, and 100% R_g and UIS tested. It is suitable for applications such as OR-ing.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 20V.
It is available in a TO-263 (D²Pak) surface-mount package.
The junction temperature range is -55°C to 175°C.
The maximum continuous drain current is 60A at case temperature 25°C.
The typical on-resistance is 3.1mOhm at VGS=10V, ID=20A.
The gate threshold voltage ranges from 1V to 3V at ID=250µA.
The maximum power dissipation is 120W at case temperature 25°C.