| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
350 pcs
|
350 pcs | On Request | 1 | On Request | On Request | 07+PBF | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SUM52N20-39P-E3 is a single N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 200V and a continuous drain current (Tc) of 52A. It utilizes Metal Oxide Semiconductor technology.
The MOSFET has a low on-resistance (Rds On) of 38mOhm when measured at 20A drain current and 15V gate-source voltage. The gate charge (Qg) is a maximum of 185nC at 15V, and the input capacitance (Ciss) is 4220pF at 25V.
It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 3.12W (Ta) or 250W (Tc). The gate threshold voltage (Vgs(th)) is 4.5V maximum at 250µA, and the maximum gate-source voltage (Vgs) is ±25V.
Packaged in a TO-263 (D²Pak) surface mount package, this component is suitable for various power management applications requiring high voltage and current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 200V.
The maximum continuous drain current is 52A at case temperature (Tc).
The device operates over a junction temperature range of -55°C to 175°C.
It is supplied in a TO-263 (D²Pak) surface-mount package.
The maximum on-resistance (Rds(on)) is 38mΩ at a drain current of 20A and gate-source voltage of 15V.
The total gate charge (Qg) is 185nC at a gate-source voltage of 15V.
The input capacitance (Ciss) is 4220pF at a drain-source voltage of 25V.