| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
782 pcs
|
782 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUM50P10-42-E3 is a P-Channel Power MOSFET designed for applications requiring high performance and reliability. It offers a drain-source breakdown voltage of 100V and a continuous drain current capability of up to 36A at 25°C case temperature.
Key electrical characteristics include a maximum drain-source on-state resistance (Rds(on)) of 0.042 Ohm at 14A and 10V gate-source voltage, and 0.047 Ohm at 13A and 4.5V gate-source voltage. The gate threshold voltage is typically between -1V and -3V. Dynamic characteristics include an input capacitance (Ciss) of 4600 pF at 50V and a gate charge (Qg) of 160 nC at 10V.
This MOSFET is housed in a surface-mount TO-263-3, D²Pak package, making it suitable for various board-level designs. It operates within a temperature range of -55°C to 150°C. The device is compliant with RoHS Directive 2002/95/EC.
Applications for the SUM50P10-42-E3 include load switching and ORing circuits, where its robust performance and thermal characteristics are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -100V.
It is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package, with the supplier device package being TO-263 (D²Pak).
The operating junction and storage temperature range is -55°C to 150°C.
The maximum continuous drain current is -36A at TC=25°C.
The maximum on-resistance is 0.042 Ohm at VGS=-10V and ID=-14A.
The gate threshold voltage range is -1V to -3V at ID=-250µA.
The maximum single avalanche energy is 80mJ at L=0.1mH.