| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,872 pcs
|
9872 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
6,600 pcs
|
6600 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SUM40N15-38-E3 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for high-efficiency power switching applications. The device features a drain-source breakdown voltage of 150V and a continuous drain current rating of 80A (minimum on-state drain current).
Key electrical characteristics include a maximum drain-source on-state resistance of 38mΩ at VGS = 10V and ID = 15A, and 42mΩ at VGS = 6V and ID = 10A. The gate threshold voltage is 4V maximum at 250µA. The device offers typical input capacitance of 2500pF and total gate charge of 60nC at 10V, enabling efficient gate drive.
The SUM40N15-38-E3 is housed in a TO-263 (D2PAK) surface-mount package, suitable for automated assembly. It is commonly used in power supplies, DC-DC converters, motor control, and other power management circuits where high voltage and low on-resistance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V minimum at ID = 250µA.
80A minimum on-state drain current at VDS ≥ 5V, VGS = 10V.
38mΩ maximum at VGS = 10V, ID = 15A.
4V maximum at VDS = VGS, ID = 250µA.
60nC maximum at VDS = 75V, VGS = 10V, ID = 40A.
2500pF typical at VDS = 25V, f = 1MHz.