BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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2,113 pcs
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2113 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The SUM40N10-30-GE3 from VBsemi is a high-efficiency N-channel MOSFET designed for applications requiring robust voltage tolerance and significant current handling. Packaged in a TO263, this component features a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 70A.
Utilizing Trench technology, the SUM40N10-30-GE3 boasts a low on-resistance (RDS(ON)) of 20mΩ at a gate-source voltage (VGS) of 10V. This characteristic ensures stable performance and minimizes power loss, making it suitable for efficient current control and power conversion tasks.
This MOSFET is well-suited for various applications including power management systems, DC-DC converters, industrial automation, and control systems. Its ability to handle high currents and voltages efficiently contributes to reduced heat generation and increased equipment lifespan in demanding power electronic systems.
The maximum drain-source voltage is 100V.
The maximum drain current is 70A.
The typical on-resistance is 20mΩ at VGS = 10V.
It is available in a TO263 surface mount package.
The gate-source voltage range is ±20V.
The typical threshold voltage is 1.8V.