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24,000 pcs
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24000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,581 pcs
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2581 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,820 pcs
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1820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | T55BAK | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUM110P08-11L-E3 is a P-Channel MOSFET belonging to the TrenchFET Power MOSFET technology. It is designed for high-performance power switching applications.
Key electrical specifications include a drain-source breakdown voltage of 80V and a maximum continuous drain current of 110A at 25°C case temperature. The on-resistance (Rds On) is as low as 11.2mOhm at a gate-source voltage of 10V and a drain current of 20A. The device operates within a temperature range of -55°C to 175°C.
This MOSFET is housed in a TO-263-3, D²Pak package, suitable for surface mounting. The package offers good thermal performance with a maximum power dissipation of 375W at 25°C case temperature and a junction-to-case thermal resistance of 0.4°C/W. It is designed for efficient power management in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -80 V at VGS = 0 V, ID = -250 µA.
The continuous drain current is -110 A at TC = 25 °C, -71 A at TC = 125 °C, -23.5 A at TA = 25 °C, and -13.6 A at TA = 125 °C.
The maximum on-resistance is 11.2 mOhm at ID = 20 A, VGS = 10 V, and 14.5 mOhm at ID = -109 A, VGS = -4.5 V.
The operating junction and storage temperature range is -55°C to 175°C.
It is available in a TO-263-3, D²Pak (2 leads + tab), TO-263AB surface-mount package.
The maximum power dissipation is 375 W at TC = 25 °C, 125 W at TC = 125 °C, 13.6 W at TA = 25 °C, and 4.5 W at TA = 125 °C.
The maximum gate charge is 270 nC at VGS = 10 V.