| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,522 pcs
|
25522 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Package / Case |
The Vishay Dale SUM110P06-08L is a P-Channel Power MOSFET featuring TrenchFET technology. It is rated for a drain-source breakdown voltage of -60V and offers a low on-state resistance (rDS(on)) as low as 0.0065 Ω at a gate-source voltage of -10V and a drain current of -30A. The device can handle a continuous drain current of up to 110A at 25°C case temperature and a pulsed drain current of 200A.
With a maximum power dissipation of 272W at 25°C case temperature, this MOSFET is suitable for demanding applications. It operates within a junction and storage temperature range of -55°C to 175°C. The TO-263 package provides a low thermal resistance, making it suitable for efficient heat dissipation when mounted on a PCB.
Key electrical characteristics include a gate-source voltage range of ±20V and a gate threshold voltage between 1V and 3V. Dynamic characteristics such as input capacitance (Ciss) are 9200pF, output capacitance (Coss) are 975pF, and reverse transfer capacitance (Crss) are 760pF, all measured at 1MHz. The total gate charge (Qg) is typically 160nC to 240nC under specific test conditions.
This MOSFET is designed for applications requiring high current and voltage handling capabilities. Its robust construction and thermal performance make it a reliable choice for power management solutions.
-55°C to 175°C.
TO-263.
110A at TC = 25°C, limited by package.
Typically 6.5 mΩ at VGS = -10V, ID = -30A.
-1V to -3V.
160 nC to 240 nC at VDS = -30V, VGS = -10V, ID = -110A.
Single pulse avalanche energy of 211 mJ.