BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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6,325 pcs
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6325 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Vishay Dale SUM110N10-09 is a high-performance N-Channel Power MOSFET featuring TrenchFET technology. It is rated for a drain-source voltage (VDS) of 100V and can handle a continuous drain current (ID) of up to 110A at 25°C, with a package-limited rating.
This MOSFET boasts a low on-state resistance (RDS(on)) of 0.0095 Ω at VGS = 10V, contributing to efficient power handling. It is designed to operate at junction temperatures up to 175°C, making it suitable for demanding thermal environments. The device comes in a TO-263 surface-mount package, offering a low thermal resistance for effective heat dissipation when mounted on a PCB.
Key electrical characteristics include a gate threshold voltage (VGS(th)) between 2V and 4V, and dynamic parameters such as input capacitance (Ciss) of 6700 pF and total gate charge (Qg) of 110-160 nC. The SUM110N10-09 is suitable for various power switching applications where high current and high temperature performance are critical.
The drain-source breakdown voltage is 100 V.
The maximum continuous drain current is 110 A at 25°C and 87 A at 125°C.
The typical drain-source on-state resistance is 0.0078 Ω at VGS = 10V and ID = 30A.
The operating junction and storage temperature range is -55°C to 175°C.
The SUM110N10-09 is in a TO-263 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.