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900 pcs
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900 pcs | On Request | 1 | On Request | On Request | 0243+ | On Request | On Request |
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The Vishay Siliconix SUM110N08-07 is an N-Channel TrenchFET® Power MOSFET designed for applications such as automotive boardnets, motor drives, and DC/DC converters. It offers a continuous drain current of 110A at 25°C case temperature and a pulsed drain current of up to 350A.
Key electrical specifications include a Drain-Source Breakdown Voltage of 75V, a typical Gate Threshold Voltage ranging from 2.5V to 4.0V, and a low Drain-Source On-State Resistance of 0.007Ω at a gate-source voltage of 10V and drain current of 30A. The MOSFET also exhibits typical capacitance values such as Input Capacitance of 5250pF and Output Capacitance of 700pF.
With a maximum power dissipation of 200W at 25°C case temperature and a junction-to-case thermal resistance of 0.75°C/W, this device is suitable for high power applications. The operating junction and storage temperature range is from -55°C to 175°C.
The SUM110N08-07 is available in a TO-263 surface mount package. The datasheet indicates Pb-containing terminations are not RoHS compliant, but exemptions may apply, and a Lead (Pb)-free version is also available.
The Drain-Source Breakdown Voltage is 75V.
The typical Drain-Source On-State Resistance is 0.007 Ohms at VGS = 10V and ID = 30A.
The continuous drain current is 110A at 25°C case temperature and 63A at 125°C case temperature.
The operating junction and storage temperature range is -55°C to 175°C.
It is available in a TO-263 package for surface mounting.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.