| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,462 pcs
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3462 pcs | On Request | 1 | On Request | On Request | 1047+ | On Request | On Request |
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This Vishay Dale SUM110N06-3M4L-E3 is a high-performance N-Channel TrenchFET Power MOSFET designed for demanding applications. It offers a 60V drain-source breakdown voltage and can handle a continuous drain current of up to 110A at 25°C case temperature.
The MOSFET exhibits a low on-state resistance (Rds(on)) of 3.4mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 30A. It also maintains a low resistance of 4.1mOhm at Vgs = 4.5V and Id = 20A. The device operates across a wide temperature range from -55°C to 175°C.
Packaged in a surface-mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, this MOSFET is suitable for various power management applications. Its thermal resistance from junction to case is a low 0.4°C/W, enabling efficient heat dissipation under load. The maximum power dissipation is rated at 375W when the case temperature is 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V minimum at VGS=0V, ID=250µA.
TO-263-3 (D²Pak) surface mount package.
-55°C to 175°C junction temperature.
3V at VDS=VGS, ID=250µA.
3.4mΩ maximum at VGS=10V, ID=30A.
300nC maximum at VDS=30V, ID=110A, VGS=10V.
12900pF typical at VDS=25V, f=1MHz.