| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,922 pcs
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2922 pcs | On Request | 1 | On Request | On Request | 0948+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUM110N04-2M1P-E3 is an N-Channel TrenchFET Power MOSFET designed for high-performance applications. It features a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of up to 110A at 25°C case temperature.
Key electrical characteristics include a low on-state resistance (Rds On) of 2.1mOhm at 30A and 10V Vgs, and 2.4mOhm at 20A and 4.5V Vgs. The gate charge (Qg) is typically 240nC at 10V Vgs. The device operates over a wide temperature range from -55°C to 150°C.
Packaged in a surface-mount TO-263 (D²Pak) package, this MOSFET is suitable for synchronous rectification and power supply applications. Its robust construction and high current handling capabilities make it a reliable choice for demanding power management designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 40V.
The continuous drain current is 110A at case temperature (Tc) and 29A at ambient temperature (Ta).
The maximum drain-source on-state resistance is 2.1mΩ at VGS = 10V and ID = 30A, and 2.4mΩ at VGS = 4.5V and ID = 20A.
The device is available in a surface-mount TO-263 (D²Pak) package.
The operating junction and storage temperature range is -55°C to 150°C.