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781 pcs
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781 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request | |
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677 pcs
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677 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The Vishay Dale SUM110N04-03P is an N-Channel Vertical DMOS MOSFET suitable for both linear and switching applications. It is designed to operate accurately over a temperature range of -55°C to 125°C, with a maximum junction temperature of 175°C.
Key electrical characteristics include a typical gate threshold voltage of 3.1V and a low drain-source on-state resistance of 0.0025 Ω at 30A and VGS of 10V. The device exhibits a typical forward transconductance of 126 S and a typical forward voltage of 1.1V at 85A.
Dynamic characteristics such as input capacitance (Ciss) of 6500 pF, output capacitance (Coss) of 1400 pF, and reverse transfer capacitance (Crss) of 570 pF are provided. The total gate charge (Qg) is typically 90 nC. Switching parameters like turn-on delay time, rise time, turn-off delay time, and fall time are also specified.
This SPICE device model is intended as a guideline and does not constitute a commercial product datasheet. Designers should refer to the appropriate datasheet for guaranteed specification limits.
The typical drain-source on-state resistance (rDS(on)) is 0.0025 Ω at VGS = 10 V and ID = 30 A.
The maximum operating temperature (TJ) is 175°C.
The typical gate threshold voltage (VGS(th)) is 3.1 V.
The typical input capacitance (Ciss) is 6500 pF.
The typical total gate charge (Qg) is 90 nC.