| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,800 pcs
|
5800 pcs | On Request | 1 | On Request | On Request | 0816+PB | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 949 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUM110N04-03-E3 is an N-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage (Vdss) of 40V and a continuous current rating of 110A at the case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 2.8mOhm at 30A and 10V, and a gate charge (Qg) of 250nC at 10V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-to-source voltage of ±20V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB format and utilizes surface mount technology.
The part is specified with a power dissipation of 3.75W at ambient temperature and 375W at case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40V.
The continuous drain current is 110A at case temperature.
The maximum on-resistance is 2.8mOhm at 30A drain current and 10V gate voltage.
It is available in a TO-263-3 (D²Pak) surface-mount package.
The operating junction temperature range is -55°C to 175°C.
The maximum gate threshold voltage is 4V at a drain current of 250µA.
The maximum power dissipation is 375W at case temperature (Tc).