| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,020 pcs
|
9020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SUG90090E-GE3 is an N-Channel power MOSFET designed for high-current switching applications. It features a minimum drain-source breakdown voltage of 200V and a maximum continuous drain current of 100A at case temperature 25°C, derated to 77.6A at 125°C. The on-resistance is 9.5mΩ maximum at VGS=10V and ID=20A, with a typical gate charge of 86nC and maximum of 129nC at VGS=10V. Input capacitance is 5220pF maximum at VDS=100V. The device is housed in a TO-247AC through-hole package, suitable for mounting on heatsinks in power circuits. The specs support both 7.5V and 10V gate drive voltages, providing design flexibility for various gate drive circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V minimum at VGS=0V, ID=250μA.
±20V.
9.5mΩ maximum at ID=20A, VGS=10V.
100A at TC=25°C, derated to 77.6A at TC=125°C.
129nC maximum at VGS=10V; typical 86nC.
5220pF maximum at VDS=100V.
TO-247AC.