SUG80050E-GE3 The Vishay Dale SUG80050E-GE3 is an N-Channel MOSFET designed for high-power applications. It offers a 150V drain-source voltage and 100A continuous current capability.
Mfr Part #:

SUG80050E-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SUG80050E-GE3 is an N-Channel MOSFET designed for high-power applications. It offers a 150V drain-source voltage and 100A continuous current capability.
✓ Total Stock: 23,520 pcs
$ Price Range: $2.56

SUG80050E-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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23,520 pcs
23520 pcs On Request 1 On Request On Request On Request On Request On Request

SUG80050E-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SUG80050E-GE3 Description

Short technical summary and product information.

The Vishay Dale SUG80050E-GE3 is a ThunderFET® power MOSFET featuring an N-Channel configuration. It is rated for a maximum drain-source voltage (Vds) of 150V and can handle a continuous drain current (ID) of 100A at case temperatures up to 125°C. The MOSFET exhibits a low on-resistance (Rds(on)) of 5.4mΩ at 20A and 10V gate-source voltage.

 

Designed for demanding applications, this MOSFET has a maximum junction temperature of 175°C and a high power dissipation capability of 500W at 25°C case temperature. It is packaged in a TO-247-3 configuration with through-hole mounting.

 

Key electrical characteristics include a gate charge (Qg) of 165nC at 10V and an input capacitance (Ciss) of 6250pF at 75V. The device is tested for R g and UIS, ensuring reliability in operation.

 

Applications for the SUG80050E-GE3 include synchronous rectification, power supplies, DC/AC inverters, DC/DC converters, solar micro inverters, and motor drive switches.

SUG80050E-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SUG80050E-GE3 N-Channel 150V 100A TO-247 Power MOSFET
Subcategory: N-Channel

SUG80050E-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SUG80050E-GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SUG80050E-GE3 Features

  • N-Channel 150V power MOSFET.
  • Low Rds(on) of 5.4mOhm at 10V Vgs.
  • High continuous current rating of 100A.
  • Maximum 175°C junction temperature.
  • TO-247 package with through-hole mounting.

SUG80050E-GE3 Applications

  • Ideal for synchronous rectification.
  • Suitable for power supply designs.
  • Used in DC/AC inverter circuits.
  • Applicable for DC/DC converters.
  • Designed for motor drive switches.

SUG80050E-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SUG80050E-GE3?

The drain-source breakdown voltage is 150 V.

What is the maximum continuous drain current for the SUG80050E-GE3?

The maximum continuous drain current is 100 A at 25°C case temperature and 100 A at 125°C case temperature.

What is the Rds(on) of the SUG80050E-GE3 MOSFET?

The Rds(on) is a maximum of 5.4mΩ at 20A drain current and 10V gate-source voltage.

What is the operating temperature range for the SUG80050E-GE3?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the SUG80050E-GE3 MOSFET supplied in?

The SUG80050E-GE3 is supplied in a TO-247-3 package with through-hole mounting.

Is the SUG80050E-GE3 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SUG80050E-GE3?

The Moisture Sensitivity Level is 1 Unlimited.

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