| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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26,656 pcs
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26656 pcs | On Request | 1 | On Request | On Request | 1533+ | On Request | On Request | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
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4,787 pcs
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4787 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,597 pcs
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1597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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758 pcs
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758 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
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22 pcs
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22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUD50P10-43L-E3 is a P-Channel Power MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 37.1A at a case temperature of 25°C. The MOSFET exhibits a low on-resistance (RDS(on)) of 43mOhm at 9.2A and 10V gate-source voltage.
This device operates within a wide temperature range of -55°C to 175°C. Its TrenchFET technology contributes to efficient power handling. The MOSFET is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for compact designs.
Key electrical characteristics include a gate-source voltage (Vgs) of ±20V and a gate charge (Qg) of 160nC at 10V. The maximum power dissipation is rated at 136W at 25°C case temperature and 8.3W at 25°C ambient temperature. This MOSFET is designed for applications requiring reliable P-channel switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 100V.
The continuous drain current is 37.1A at 25°C case temperature.
The maximum on-resistance is 43mOhm at 9.2A and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.