| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
687 pcs
|
687 pcs | On Request | 1 | On Request | On Request | 17+PBF | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
SUD50P08-26-E3 is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for power switching and management applications, offering a maximum drain-source voltage of 80V and a continuous drain current of 50A at a case temperature of 25°C. The maximum on-resistance is 26mOhm at a gate-source voltage of 10V, with a gate charge of 155nC and an input capacitance of 5160pF at 40V drain-source voltage.
The device supports a drive voltage of 10V for optimal on-resistance and has a maximum gate-source voltage of ±20V. The gate threshold voltage is 4V maximum at a drain current of 250µA. The operating junction temperature range extends from -55°C to 175°C. Power dissipation is rated at 136W when mounted on a case (Tc) and 8.3W at ambient temperature (Ta).
The SUD50P08-26-E3 is supplied in a TO-252 (DPak) surface-mount package, suitable for automated assembly. The package includes two leads and a tab, and the supplier device package designation is TO-252AA. This component is intended for use in DC-DC converters, load switching, and other power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
The continuous drain current is 50A at a case temperature of 25°C.
The maximum on-resistance is 26mOhm at a drain current of 12.9A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
The device is available in a TO-252 surface-mount package (DPak).
The input capacitance is 5160pF at Vds=40V.
The gate charge is 155nC at Vgs=10V.