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8,877 pcs
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8877 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Vishay Siliconix SUD50P08-25L-E3 is a P-Channel TrenchFET Power MOSFET designed for demanding applications. It features a drain-source breakdown voltage of 80V and a continuous drain current capability of up to 50A at 25°C case temperature.
This MOSFET exhibits a low on-state resistance, with a typical value of 0.0252 Ω at VGS = -10V and ID = -12.5A. It operates over a wide temperature range from -55°C to 175°C, making it suitable for high-temperature environments. The device is housed in a TO-252 package.
Key electrical characteristics include a gate-source threshold voltage between -1V and -3V, and a total gate charge of up to 160 nC. The component is RoHS3 compliant and lead-free.
Applications for this MOSFET include power switching and control circuits where high current and voltage handling are required. Its surface-mount TO-252 package facilitates integration into compact designs.
The drain-source breakdown voltage is -80 V.
The typical on-state resistance is 0.0252 Ω at VGS = -10 V and ID = -12.5 A.
The maximum continuous drain current is 50 A at TC = 25 °C.
The operating junction and storage temperature range is -55 °C to 175 °C.
It is supplied in a TO-252 package.
The product is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.