| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,340 pcs
|
1340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
53 pcs
|
53 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SUD50P06-15-GE3 is a P-Channel power MOSFET designed for load switch applications. It features a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 50A at 25°C case temperature.
This MOSFET offers a low on-state resistance (RDS(on)) of 15mOhm at a gate-source voltage (VGS) of 10V. The gate threshold voltage (VGS(th)) is a maximum of 3V at 250µA. It operates within a junction temperature range of -55°C to +150°C.
The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. It is rated for a maximum power dissipation of 113W at 25°C case temperature and 2.5W at 25°C ambient temperature. The MOSFET is lead (Pb)-free and halogen-free.
Key electrical parameters include a gate-source voltage (VGS) of ±20V, input capacitance (Ciss) of 4950pF at 25V, and gate charge (Qg) of 165nC at 10V. Thermal resistance from junction to case (RthJC) is a maximum of 1.1°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -60 V minimum at VGS = 0 V and ID = -250 μA.
The maximum continuous drain current is -50 A at TC = 25 °C.
The maximum on-state resistance is 15 mOhm at VGS = -10 V and ID = 17 A, and 20 mOhm at VGS = -4.5 V.
The operating junction and storage temperature range is -55 °C to +150 °C.
It is available in a TO-252 (DPak) surface-mount package with a TO-252AA supplier package.
The maximum gate threshold voltage is 3 V at VDS = VGS and ID = -250 µA.
The maximum power dissipation is 113 W at TC = 25 °C and 2.5 W at TA = 25 °C.