| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20,100 pcs
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20100 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
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| SVHC Present |
The Vishay SUD50P04-13L-GE3 is a P-Channel Power MOSFET designed for various electronic applications. It offers a drain-source breakdown voltage of -40V and a continuous drain current of up to -60A at 25°C.
Key electrical characteristics include a low on-state resistance of 0.013 Ohms at VGS = -10V and a gate-source threshold voltage typically around -1.0V. The device operates efficiently with a maximum power dissipation of 93.7W at 25°C case temperature.
This MOSFET is housed in a TO-252 package, suitable for surface mounting. It features a wide operating junction and storage temperature range from -55°C to 175°C, making it robust for demanding environments. The TrenchFET technology ensures high performance and efficiency.
Applications for the SUD50P04-13L-GE3 include load switching, power supply converter circuits, and driver applications for relays and solenoids.
The maximum drain-source voltage is -40V, and the maximum gate-source voltage is ±20V.
It comes in a TO-252 (DPAK) surface-mount package.
The operating junction temperature range is -55°C to +175°C.
The continuous drain current is -60A at 25°C case temperature, with a pulsed rating of -100A.
The typical drain-source on-resistance is 10.5 mΩ at VGS = -10V and ID = -30A; maximum is 13 mΩ.
Yes, it has a maximum avalanche current of -40A and avalanche energy of 80 mJ.
The typical total gate charge is 63 nC, with gate-source charge 13 nC and gate-drain charge 16 nC at VDS = -20V and VGS = -10V.