| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
47,020 pcs
|
47020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,003 pcs
|
1003 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
572 pcs
|
572 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SUD50P04-08-GE3 is a P-Channel enhancement-mode MOSFET from Vishay Dale, designed for high-current switching applications. It features a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current rating of 50A, which is package limited. The device offers a low on-resistance of 8.1mOhm maximum at VGS = -10V and ID = -22A, enabling efficient power handling.
Key electrical characteristics include a gate threshold voltage of 2.5V maximum at ID = -250µA, a typical gate charge of 600nC at VGS = -10V, and an input capacitance of 5380pF maximum at VDS = 20V. Switching performance is characterized by typical rise and fall times of 12ns and 18ns respectively, with turn-on delay of 15ns and turn-off delay of 70ns. The device is avalanche rated with a maximum avalanche current of 46A and single pulse avalanche energy of 106mJ.
The MOSFET is housed in a surface-mount TO-252-3 (DPak) package with a supplier device package of TO-252AA. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 73.5W at case temperature 25°C. The device utilizes TrenchFET technology and is available in tape and reel packaging with a standard quantity of 2000 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40V.
The device is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package with a supplier device package of TO-252AA.
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current is 50A at case temperature 25°C (package limited).
The maximum on-resistance is 8.1mOhm at VGS = -10V and ID = -22A.
The maximum gate threshold voltage is 2.5V at ID = -250µA.
The typical gate charge is 600nC at VGS = -10V.