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25,334 pcs
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25334 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The SUD50N10-34P-E3 from VBsemi is a power MOSFET designed for various electronic applications. It features a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 45A. The gate-source voltage (VGS) is rated at ±20V, and the gate threshold voltage (Vth) is typically 1.8V.
This MOSFET utilizes a technology designation that implies a low on-resistance of 34 mΩ. It is housed in a TO252 package, which is suitable for surface-mount applications requiring efficient heat dissipation.
The component is suitable for applications in energy management, industrial automation, and consumer electronics where reliable power switching is essential. Its specifications make it a versatile choice for designers working on power conversion and control circuits.
The drain-source voltage rating is 100V.
The continuous drain current is 45A.
The drain-source on-resistance is 34 mΩ.
The gate-source voltage rating is ±20V.
The gate threshold voltage is 1.8V.
It comes in a TO252 package.