| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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28,500 pcs
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28500 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SUD50N10-18P-GE3 is a high-performance N-Channel TrenchFET Power MOSFET designed for applications requiring efficient switching and power handling. It features a maximum drain-source voltage (Vds) of 100V and a low on-resistance (Rds On) of 18.5mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 15A.
This MOSFET offers a continuous drain current of up to 50A (Tc=25°C) and a pulsed drain current of 100A. The gate charge (Qg) is 75nC at 10V, and the gate-source threshold voltage (Vgs(th)) is 5V maximum at 250µA. The device operates over a wide temperature range of -55°C to 150°C (TJ).
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 (TO-252AA) surface-mount package, the SUD50N10-18P-GE3 is suitable for primary side switching and isolated DC/DC converter applications. Its robust design and high current capability make it a reliable choice for demanding power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (VDS) is 100V minimum at ID=250µA.
The device is supplied in a surface mount TO-252AA (DPak) package.
The junction operating and storage temperature range is -55°C to 150°C.
Continuous drain current is 50A at case temperature 25°C and 8.2A at ambient temperature 25°C.
The maximum on-resistance is 18.5mOhm at VGS=10V and ID=15A.
The total gate charge at VGS=10V is 75nC maximum.