| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,513 pcs
|
1513 pcs | On Request | 1 | On Request | On Request | 1044 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUD50N06-08H-E3 is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for high-power applications, featuring a drain-source voltage (Vdss) of 60V and a continuous drain current of 93A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 7.8mOhm at 20A and 10V gate-source voltage (Vgs), and a gate charge (Qg) of 145nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is 4.5V maximum at 250µA, and the maximum gate-source voltage is ±20V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It has a maximum power dissipation of 3W when mounted on a PCB (Ta) and 136W when mounted on a heatsink (Tc).
The component is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. It has a RoHS3 compliant status and an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 60V.
The continuous drain current is 93A at case temperature (Tc).
The maximum on-resistance is 7.8 milliohms at 20A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 175°C.
It comes in a TO-252-3 (DPak) surface-mount package, also known as SC-63, with supplier package TO-252AA.
The maximum gate threshold voltage (Vgs(th)) is 4.5V at 250µA drain current.
The maximum gate charge (Qg) is 145 nC at 10V gate-source voltage.