BC847BS.115
NXP Semiconductors
The BC847BS.115 is a bipolar transistor array from NXP Semiconductors. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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44,379 pcs
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44379 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Industrial Grade | |
| SVHC Present |
The Vishay SUD50N06-07L is an N-Channel MOSFET belonging to the TrenchFET® series. It is designed for high-performance power switching applications.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 96A at 25°C. The on-resistance (Rds On) is rated at a maximum of 7.4mOhm at 20A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA, with a maximum gate-source voltage of ±20V.
This MOSFET has a maximum power dissipation of 136W (Tc) and operates within a temperature range of -55°C to 175°C. Input capacitance (Ciss) is 5800 pF at 25V, and gate charge (Qg) is 144 nC at 10V.
The device is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel.
60V.
TO-252-3, DPak (2 Leads + Tab), SC-63, surface mount.
-55°C to 175°C.
96A at case temperature 25°C.
7.4mOhm maximum at 20A drain current and 10V gate drive.
136W at case temperature.