Mfr Part #:

SUD50N03-12P-E3

Mfr Name: Vishay

The Vishay Dale SUD50N03-12P-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 17.5A. It is housed in a TO-252 package.

✓ Total Stock: 25,817 pcs

$ Price Range: $2.56

SUD50N03-12P-E3 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	25,520 pcs On Request	25520 pcs	On Request	1	On Request	On Request	18+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	297 pcs On Request	297 pcs	On Request	1	On Request	On Request	0624+	On Request	On Request

SUD50N03-12P-E3 Description

Short technical summary and product information.

The Vishay Siliconix SUD50N03-12P-E3 is an N-Channel TrenchFET Power MOSFET designed for various electronic applications. It features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 17.5A at 25°C ambient temperature. The device offers a low on-state resistance (Rds(on)) of 0.012 Ohm at a gate-source voltage (Vgs) of 10V and ID = 20A, and 0.0175 Ohm at Vgs = 4.5V and ID = 15A.

This MOSFET operates within a junction and storage temperature range of -55°C to 175°C. Its input capacitance (Ciss) is typically 1600 pF at 25V and 1 MHz, with an output capacitance (Coss) of 285 pF under the same conditions. The device is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 3V at 250µA and a maximum gate-source voltage of ±20V. The maximum power dissipation is 6.5W at 25°C ambient temperature and 46.8W at 25°C case temperature. The SUD50N03-12P-E3 is compliant with RoHS Directive 2002/95/EC.

SUD50N03-12P-E3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Siliconix SUD50N03-12P N-Channel 30 V (D-S) MOSFET

Subcategory: Single

SUD50N03-12P-E3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SUD50N03-12P-E3 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SUD50N03-12P-E3 Features

30V drain-source breakdown voltage.
17.5A continuous drain current.
Low Rds(on) of 0.012 Ohm at 10V Vgs.
TO-252 surface mount package.
RoHS3 compliant.

SUD50N03-12P-E3 Applications

Suitable for power switching applications.
Used in DC-DC converters.
Ideal for load switch circuits.
Applicable in battery management systems.

SUD50N03-12P-E3 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage for the SUD50N03-12P-E3?

The drain-source breakdown voltage is 30 V.

What is the typical Rds(on) at Vgs = 10V for this MOSFET?

The typical Rds(on) at Vgs = 10V and ID = 20A is 0.01 Ohm.

What is the continuous drain current rating?

The continuous drain current is 17.5 A at 25°C ambient temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the SUD50N03-12P-E3 supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is this MOSFET RoHS compliant?

Yes, the RoHS Status is RoHS3 Compliant.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	17.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	6.5 W
Rds On (Max) @ Id, Vgs	0.01 Ohm / 0.012 Ohm
SVHC Present	Not Present
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	1 V / 3 V