| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,700 pcs
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2700 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
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| Input Capacitance | |
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The SUD50N03-10P from Siliconix is an N-Channel MOSFET housed in a TO-252 package. This component is designed for various power switching applications, offering a drain-source voltage of 30V and a continuous drain current of up to 50A at 25°C case temperature.
Key electrical characteristics include a gate threshold voltage ranging from 1V to 2V and a low on-state resistance, with a typical Rds(on) of 0.010 Ω at 10V gate-source voltage and 25A drain current. The device operates within a junction and storage temperature range of -55°C to 175°C.
With a maximum power dissipation of 65W at 25°C case temperature, the SUD50N03-10P is suitable for applications requiring efficient power handling. Its TO-252 package is designed for surface mounting.
This MOSFET is characterized by its N-channel enhancement mode construction, providing reliable performance in demanding power circuits.
The drain-source voltage (Vds) is rated at 30V.
The continuous drain current (Id) is 50A at Tc=25°C and 40A at Tc=100°C.
The gate threshold voltage (Vgs(th)) ranges from 1V to 2V at Vds=Vgs, Id=250µA.
The typical on-resistance (Rds(on)) is 10 mΩ at Vgs=10V, Id=25A, and 11 mΩ at Vgs=4.5V, Id=15A.
It is offered in a TO-252 (DPAK) surface mount package.
The operating junction and storage temperature range is -55°C to 175°C.
The input capacitance (Ciss) is 2700 pF at Vgs=0V, Vds=25V, f=1MHz.