SUD50N03-06P-E3 The Vishay Siliconix SUD50N03-06P-E3 is an N-Channel Power MOSFET with a 30V Drain-Source Voltage and 84A continuous drain current. It is supplied in a TO-252 package.
Mfr Part #:

SUD50N03-06P-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SUD50N03-06P-E3 is an N-Channel Power MOSFET with a 30V Drain-Source Voltage and 84A continuous drain current. It is supplied in a TO-252 package.
✓ Total Stock: 8,053 pcs
$ Price Range: $2.56

SUD50N03-06P-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,075 pcs
6075 pcs On Request 1 On Request On Request 07+ On Request On Request
Non-Authorised Inventory information
1,978 pcs
1978 pcs On Request 1 On Request On Request On Request On Request On Request

SUD50N03-06P-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SUD50N03-06P-E3 Description

Short technical summary and product information.

The Vishay Siliconix SUD50N03-06P-E3 is an N-Channel Power MOSFET designed for efficient operation in DC/DC converters and synchronous rectifier applications. It features a Drain-Source Voltage (Vds) of 30V and a high continuous drain current capability of 84A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds(on)) of 6.5mOhm at 20A and 10V Vgs, and 9.5mOhm at 59A and 4.5V Vgs, making it suitable for high-efficiency power designs. The device operates within a junction temperature range of -55°C to 175°C and is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package.

 

Key electrical characteristics include a Gate Threshold Voltage (Vgs(th)) of 3V maximum at 250µA and a Gate-Source Voltage (Vgs) range of ±20V. The MOSFET also provides a pulsed drain current of 100A and avalanche current capabilities.

 

Optimized for low-side synchronous rectifier operation, the SUD50N03-06P-E3 is a robust component for power management solutions. Its surface-mount TO-252AA package facilitates integration into compact electronic designs.

SUD50N03-06P-E3 Quick Information

Product Type: Power MOSFET
Canonical Name: SUD50N03-06P-E3 N-Channel 30V 84A TO-252 Power MOSFET
Subcategory: N-Channel

SUD50N03-06P-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SUD50N03-06P-E3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SUD50N03-06P-E3 Features

  • 30V Drain-Source Voltage rating.
  • 84A continuous drain current.
  • Low Rds(on) for efficiency.
  • TO-252 surface mount package.
  • Optimized for synchronous rectification.

SUD50N03-06P-E3 Applications

  • Used in DC/DC converters.
  • Suitable for synchronous rectifiers.
  • Power management solutions.
  • Low-side switching applications.

SUD50N03-06P-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the continuous drain current?

84A at Tc=25°C.

What is the on-resistance?

6.5mOhm max at Vgs=10V, Id=20A.

What is the operating temperature range?

-55°C to 175°C.

What package is this MOSFET available in?

TO-252-3, DPak, SC-63 surface-mount.

What is the gate threshold voltage?

3V max at Id=250µA.

What is the maximum power dissipation?

88W at Tc=25°C.

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