| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
277 pcs
|
277 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SUD50N03-06AP-E3 is an N-Channel MOSFET from Vishay Dale. It features a minimum drain-source breakdown voltage of 30V and a typical gate-source threshold voltage of 1.2V. Designed for high-current switching, it can handle up to 90A continuous drain current. The device is housed in a TO-252 (DPAK) surface mount package, making it suitable for compact power management designs. These specifications make it useful for DC-DC converters, load switches, and other power distribution systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 30V at VGS = 0V and ID = 250 µA.
The typical gate-source threshold voltage is 1.2V at VDS = VGS and ID = 250 µA.