| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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42,000 pcs
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42000 pcs | On Request | 1 | On Request | On Request | 06+ROSH | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The Vishay Dale SUD50N025-06P-E3 is an N-Channel MOSFET designed for power applications. It features a drain-source voltage (VDS) of 25V and a continuous drain current (ID) of 78A at 25°C case temperature.
This MOSFET offers a low on-state resistance (Rds On) of 6.2mOhm at 20A and 10V VGS, and 10mOhm at 15A and 4.5V VGS. The input capacitance (Ciss) is 2490 pF at 12V VDS, and the gate charge (Qg) is 66 nC at 10V VGS.
With a maximum power dissipation of 65W at 25°C case temperature and 10.7W at 25°C ambient temperature, it operates within a junction temperature range of -55°C to 175°C. The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.
Applications include DC/DC conversion and low-side switching, particularly in desktop PC power supplies. The MOSFET technology employed is TrenchFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25 V (minimum) at ID = 250 µA, VGS = 0 V.
±20 V.
-55°C to 175°C (junction).
TO-252-3, DPak (2 Leads + Tab), SC-63; supplier package TO-252AA.
78 A at case temperature 25°C.
6.2 mOhm maximum at VGS = 10 V, ID = 20 A; 10 mOhm maximum at VGS = 4.5 V, ID = 15 A.
66 nC maximum at VGS = 10 V.