| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,500 pcs
|
28500 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUD50N02-09P-E3 is a 20V N-Channel enhancement-mode MOSFET designed for efficient power management. It features a low maximum on-resistance of 0.0095 ohm at VGS = 10 V, enabling high current handling while minimizing conduction losses.
With a typical input capacitance of 1300 pF and total gate charge of 16 nC (maximum at VGS = 4.5 V), this MOSFET is optimized for fast switching and low gate drive requirements. The device exhibits fast switching times with typical turn-on delay of 8 ns and fall time of 12 ns.
The part is housed in a TO252 (DPAK) surface-mount package, suitable for automated assembly. It is designed for low-voltage applications such as DC-DC converters, load switches, and power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V minimum at VGS = 0 V, ID = 250 µA.
0.0095 ohm at VGS = 10 V, ID = 20 A; 0.017 ohm at VGS = 4.5 V, ID = 20 A.
Minimum 0.8 V, maximum 3 V at VDS = VGS, ID = 250 µA.
1300 pF at VDS = 10 V, VGS = 0 V, f = 1 MHz.
Maximum 16 nC at VDS = 10 V, VGS = 4.5 V, ID = 50 A.
TO252 (DPAK) surface-mount package.