BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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32,338 pcs
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32338 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Vishay Siliconix SUD50N02-06P-E3 is an N-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 50A at 25°C (Tc). The MOSFET exhibits a low on-resistance (Rds On) of 6 mOhm at 20A and 10V gate-source voltage (Vgs).
This component utilizes TrenchFET® technology, offering efficient performance. Its gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA, and it supports a gate-source voltage (Vgs) of up to ±20V. The input capacitance (Ciss) is a maximum of 2550 pF at 10V drain-to-source voltage (Vds).
With a maximum power dissipation of 6.8W (Ta) and 65W (Tc), the SUD50N02-06P-E3 operates within a temperature range of -55°C to 175°C (TJ). It is packaged in a surface mount TO-252AA (DPAK) package, making it suitable for space-constrained designs. The part is categorized under Transistors, FETs, MOSFETs.
The maximum drain-source voltage (Vdss) is 20V.
The continuous drain current is 50A at 25°C case temperature.
The maximum on-resistance is 6mOhm at a gate voltage of 10V and drain current of 20A.
The operating junction temperature range is -55°C to 175°C.
It is available in a surface-mount TO-252AA (DPAK) package.
The maximum gate threshold voltage is 3V at a drain current of 250µA.
The maximum power dissipation is 65W at the case temperature and 6.8W at ambient temperature.