| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
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200 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SUD50N02-06P-E3 is an N-Channel MOSFET from Vishay Dale designed for low-voltage power switching applications. It offers a maximum drain-to-source voltage of 20V and a continuous drain current of 50A at case temperature. The device features a low on-resistance of 6mOhm maximum at 20A and 10V gate drive, enabling high efficiency in power conversion circuits.
Key electrical characteristics include a gate threshold voltage of 3V maximum at 250µA, a gate charge of 30nC at 4.5V, and an input capacitance of 2550pF at 10V. The maximum power dissipation is 65W at case temperature and 6.8W at ambient temperature. The operating junction temperature range is -55°C to 175°C.
The MOSFET is housed in a surface mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA. It is suitable for automated assembly and is commonly used in DC-DC converters, load switches, and battery management systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
It is available in a surface mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA.
The operating junction temperature range is -55°C to 175°C.
The continuous drain current is 50A at case temperature.
The maximum on-resistance is 6mOhm at 20A and 10V gate drive.
The maximum gate threshold voltage is 3V at 250µA drain current.
The maximum gate charge is 30nC at 4.5V gate-source voltage.