| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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43,208 pcs
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43208 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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The Vishay Siliconix SUD50N02-06P is a TrenchFET Power MOSFET designed for demanding applications requiring high efficiency and thermal performance. It offers a 20V drain-source breakdown voltage and low on-state resistance, with typical values of 0.0060 Ω at VGS = 10V and 0.0095 Ω at VGS = 4.5V.
This MOSFET is optimized for PWM applications and operates at junction temperatures up to 175°C. Key electrical characteristics include a continuous drain current of 26A at TA = 25°C and a pulsed drain current of 100A. Thermal management is supported by a typical junction-to-case thermal resistance of 1.9°C/W.
The SUD50N02-06P is suitable for synchronous buck DC/DC conversion in desktop and server applications. It comes in a TO-252 package, designed for surface mounting.
Features include 100% Rg tested and compliance with RoHS Directive 2002/95/EC.
The drain-source breakdown voltage is 20V minimum.
The package is TO-252 (DPAK) for surface mount.
-55 to 175°C.
0.0046Ω at VGS=10V, ID=20A.
Typical 0.8V, maximum 3V.
50A at TC=25°C, 26A at TA=25°C.
101 mJ single pulse.