SUD50N02-04P-E3 The Vishay Dale SUD50N02-04P-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 50A continuous drain current. It is designed for surface mount applications in a TO-252 package.
Mfr Part #:

SUD50N02-04P-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SUD50N02-04P-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 50A continuous drain current. It is designed for surface mount applications in a TO-252 package.
✓ Total Stock: 32,800 pcs
$ Price Range: $2.56

SUD50N02-04P-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
32,800 pcs
32800 pcs On Request 1 On Request On Request 0716+ On Request On Request

SUD50N02-04P-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SUD50N02-04P-E3 Description

Short technical summary and product information.

The Vishay Dale SUD50N02-04P-E3 is an N-Channel MOSFET from the TrenchFET® series. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 50A at case temperature (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 4.3mOhm at 20A and 10V gate-source voltage (Vgs). The gate threshold voltage (Vgs(th)) is 3V at 250µA, and the maximum gate charge (Qg) is 60nC at 4.5V Vgs. The maximum gate-source voltage is ±20V.

 

This MOSFET has a maximum power dissipation of 8.3W at ambient temperature (Ta) and 136W at case temperature (Tc). It operates within a temperature range of -55°C to 175°C (TJ).

 

The component is housed in a TO-252AA package, also referred to as DPak, and is designed for surface mounting. The input capacitance (Ciss) is 5000pF at 10V Vds.

SUD50N02-04P-E3 Quick Information

Product Type: MOSFET
Canonical Name: SUD50N02-04P-E3 N-Channel MOSFET
Subcategory: N-Channel

SUD50N02-04P-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SUD50N02-04P-E3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SUD50N02-04P-E3 Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • 50A continuous drain current capability.
  • Low 4.3mOhm maximum on-resistance.
  • Surface mount TO-252 package.
  • Wide operating temperature range.

SUD50N02-04P-E3 Applications

  • Suitable for power management circuits.
  • Used in DC-DC converters.
  • Ideal for load switching.
  • Applicable in battery powered devices.

SUD50N02-04P-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

The maximum drain-source voltage (Vdss) is 20V.

What is the package type?

The package is TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package is TO-252AA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What is the continuous drain current?

The continuous drain current is 50A at case temperature.

What is the on-resistance?

The maximum on-resistance is 4.3mOhm at 20A drain current and 10V gate drive.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at 250µA drain current.

What is the mounting type?

The mounting type is surface mount.

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