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20,068 pcs
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20068 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Vishay SUD45P03-10-E3 is a P-Channel TrenchFET Power MOSFET with a drain-source voltage rating of 30V. This device offers a low on-state resistance, with typical values of 0.010 Ohms at VGS = -10V and 0.018 Ohms at VGS = -4.5V, making it suitable for efficient power switching.
Key electrical characteristics include a continuous drain current of -15A at 25°C and a pulsed drain current of -100A. The MOSFET also features dynamic parameters such as input capacitance (Ciss) of 6000pF and total gate charge (Qg) between 90nC and 150nC.
Packaged in a TO-252 surface-mount package, the SUD45P03-10-E3 is designed for applications requiring compact and efficient power management. Its operating junction temperature ranges from -55°C to 150°C, with a maximum power dissipation of 70W at 25°C case temperature.
This MOSFET is part of Vishay's TrenchFET series, known for their advanced technology and performance in power applications.
The drain-source breakdown voltage is -30V.
The typical on-state resistance at VGS = -10V is 0.010 Ohms.
The continuous drain current rating at 25°C is -15A.
The SUD45P03-10-E3 is supplied in a TO-252 package.
The operating junction and storage temperature range is -55°C to 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.