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44,365 pcs
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44365 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The SUD45P03-09 from Vishay Dale is a P-Channel Vertical DMOS MOSFET. This component is suitable for both linear and switching applications, offering typical electrical characteristics optimized over a temperature range of -55 °C to +125 °C.
Key electrical specifications include a typical Gate-Source Threshold Voltage of 1.6 V. The Drain-Source On-State Resistance is typically 7.3 mΩ at a Gate-Source Voltage of -10 V and Drain Current of -20 A, and 12.8 mΩ at -4.5 V and -15 A. Typical dynamic characteristics include an Input Capacitance of 2700 pF, Output Capacitance of 515 pF, and Reverse Transfer Capacitance of 445 pF. The Total Gate Charge is typically 60 nC.
This SPICE device model is intended as a guideline for simulation purposes. Designers should refer to the appropriate commercial datasheet for guaranteed specification limits. The model is optimized to provide a best fit to measured electrical data and is not intended as an exact physical interpretation of the device.
The operating temperature range is -55°C to +125°C.
The typical gate threshold voltage is 1.6 V at VDS = VGS, ID = -250 μA.
The typical drain-source on-resistance is 7.3 mΩ at VGS = -10 V, ID = -20 A.
The typical drain-source on-resistance is 12.8 mΩ at VGS = -4.5 V, ID = -15 A.
The typical total gate charge is 60 nC at VDS = -15 V, VGS = -10 V, ID = -20 A.
The typical input capacitance is 2700 pF at VDS = -15 V, VGS = 0 V, f = 1 MHz.
The typical diode forward voltage is -0.80 V at IS = -10 A.