| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,423 pcs
|
26423 pcs | On Request | 1 | On Request | On Request | 1322+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SUD42N03-3M9P-GE3 is an N-Channel MOSFET manufactured by Vishay Dale. It features a minimum drain-source breakdown voltage of 30V and a typical gate threshold voltage of 2.5V. The device is rated for a continuous drain current of 42A, making it suitable for power switching applications.
The MOSFET is housed in a TO252 (DPAK) surface-mount package, which is commonly used for medium-power applications. The gate threshold voltage is specified at VDS = VGS with ID = 250 µA. This component is designed for use in circuits requiring efficient switching and low on-resistance characteristics typical of modern trench MOSFET technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 30V at VDS = 0V and ID = 250µA.
The typical gate threshold voltage is 2.5V at VDS = VGS and ID = 250µA.