| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,238 pcs
|
32238 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Style | |
| Package / Case |
The Vishay SUD40N08-16-E3 is a high-performance N-Channel Power MOSFET. It offers a Drain-Source Breakdown Voltage (VDS) of 80V and a Continuous Drain Current (ID) of up to 40A at 25°C.
Key electrical characteristics include a low typical Drain-Source On-State Resistance (rDS(on)) of 0.016 Ohms at VGS = 10V and ID = 40A, along with a typical Gate Threshold Voltage (VGS(th)) of 2V. The MOSFET also exhibits a typical Gate Charge (Qg) of 42 nC and fast switching times, with a typical Rise Time (tr) of 52 ns and Fall Time (tf) of 10 ns.
With a Maximum Power Dissipation (PD) of 3W at 25°C ambient temperature and 136W at 25°C case temperature, this MOSFET is suitable for various power applications. It operates within a wide temperature range from -55°C to 175°C.
The component is packaged in a TO-252 (DPAK) surface-mount package, facilitating integration into compact designs. The SUD40N08-16-E3 is part of Vishay's TrenchFET Power MOSFET family, known for its efficiency and performance.
The maximum continuous drain current (ID) for the SUD40N08-16-E3 is 40A at 25°C case temperature and 30A at 125°C case temperature.
The typical on-resistance (rDS(on)) for the SUD40N08-16-E3 is 0.013 Ohms at a gate-source voltage of 10V and a drain current of 40A.
The operating junction and storage temperature range for the SUD40N08-16-E3 is -55°C to 175°C.
The SUD40N08-16-E3 is supplied in a TO-252-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.